Nanostructured metal oxides semiconductors for oxygen chemiresistive sensing

Nanostructured metal oxide semiconductors have been widely investigated and are commonly used in gas sensing structures. After a brief review which will be focused on chemiresistive oxygen sensing employing this type of sensing materials, for both room temperature and harsh environment applications (particularly, at high ambient temperature and high relative humidity levels), paper reports new results concerning O2 detection of a structure using a sensing layer comprising nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8 (STFO40), synthesized by sonochemical methods, mixed with single wall carbon nanotubes. The structure is a Microelectromechanical System (MEMS), based on a Silicon-on-Insulator (SOI), Complementary Metal-Oxide-Semiconductor (CMOS)-compatible micro-hotplate, comprising a tungsten heater which allows an excellent control of the sensing layer working temperature. Oxygen detection tests were performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 20% (v/v), at a constant heater temperature of 650 ◦C. Key-words: Chemiresistive Oxygen Sensing, Metal Oxide Semiconductors, Sonochemistry, STFO, Carbon Nanotubes, CMOS-compatible SOI membrane, MEMSs.